IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bias dependent performance of 1.55 /spl mu/m absorption high-speed n-i-n photodetectors using low-temperature grown GaAs

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Yi-Jen Chiu ; Zhang, S.Z. ; Kaman, V. ; Ibbetson, J.P. ; Bowers, J.E. ; Mishra, U.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.812010
Regular:

We have successfully fabricated a novel n-i-n photodetector operating at 1.55 /spl mu/m on GaAs. The characteristics at high-speed (above 20 GHz) and the high efficiency at high bias show that... View More

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