IEEE - Institute of Electrical and Electronics Engineers, Inc. - Properties of Yb/sub 3/Al/sub 5/O/sub 12/ and highly doped Yb:Y/sub 3/Al/sub 5/O/sub 12/

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Patel, F.D. ; Honea, E.C. ; Speth, J. ; Payne, S.A. ; Hutcheson, R. ; Equall, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.812004
Regular:

We report on material properties of Yb/sub 3/Al/sub 5/O/sub 12/ and highly doped Yb:YAG. Fluorescence lifetimes, calorimetry measurements and thermal properties have been obtained for Yb atomic... View More

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