IEEE - Institute of Electrical and Electronics Engineers, Inc. - Current induced absorption modulation using quantum structures in the collector of heterojunction bipolar transistors

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Shamir, N. ; Ritter, D. ; Gershoni, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811997
Regular:

Heterojunction bipolar transistors (HBTs) can be operated as current sources with a bandwidth in excess of 100 GHz. In the work, various types of quantum structures were incorporated in the... View More

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