IEEE - Institute of Electrical and Electronics Engineers, Inc. - Increased power operation of GaAs/AlGaAs waveguide p-i-n photodiodes with non-absorbing input facets, fabricated by quantum well intermixing

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): McDougall, S.D. ; Jubber, M.J. ; Kowalski, O.P. ; Boyd, A.R. ; Stanely, C.R. ; Marsh, J.H. ; Aitchison, J.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811981
Regular:

Conventional vertical access photodiodes, where the light is input perpendicular to the plane of the absorbing layer, suffer from low efficiency at RF modulation frequencies due to the thin... View More

Advertisement