IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaAsPN/InP based photodetectors for long wavelength (/spl lambda/>1.65 /spl mu/m) applications

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Wei, J. ; Gokhale, M.R. ; Thomson, J. ; Forrest, S.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811947
Regular:

InGaAsP alloys grown lattice matched to InP substrates are widely used for detectors at optical fiber communication wavelengths. For these detectors, the cutoff wavelength is 1.65 /spl mu/m as... View More

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