IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction p-i-n photodiode

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Collins, C.J. ; Li, T. ; Beck, A.L. ; Dupuis, R.D. ; Campbell, J.C. ; Carrano, J.C. ; Schurman, M.J. ; Ferguson, I.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811910
Regular:

GaN is well suited as the absorbing region for ultraviolet (UV) photodetectors. To reduce the field crowding and improve the series resistance, an AlGaN/GaN heterojunction p-i-n photodiode with a... View More

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