IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Ozbay, E. ; Biyikli, N. ; Kimukin, I. ; Aytur, O.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811909
Regular:

We report our efforts on ITO-AlAs/GaAs based resonant cavity enhanced (RCE) Schottky photodiodes for operation at the first optical communication window (840 nm). The device structure is designed... View More

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