IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electron trapping time versus annealing temperature in low temperature grown GaAs

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Chi-Kuang Sun ; Juen-Chen Wang ; Tze-Ming Liu ; Yi-Jen Chiu ; Bowers, J.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811887
Regular:

We report in our study the carrier trapping time versus different annealing temperature, which will be important for LT-GaAs application on high speed telecommunication devices. The samples... View More

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