IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power 3-12 /spl mu/m laser diodes, recent advances and future trend

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Razeghi, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811870
Regular:

High performance interband laser structures emitting between 3 to 5 /spl mu/m based on the InAsSbP material system have been developed. Lasers based on interband transitions offer advantages of... View More

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