IEEE - Institute of Electrical and Electronics Engineers, Inc. - Terahertz generation in high purity semiconductors via 3 wave DFG and cross-reststrahlenband PM

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Herman, G.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811857
Regular:

Difference frequency generation is being used in undoped, high-resistivity GaP to generate a tunable far-infrared, or terahertz, idler wave using near-infrared pump and signal sources. We have... View More

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