IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Choi, W.-J. ; Dapkus, P.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811834
Regular:

We discuss the growth and properties of an AlGaInP edge emitting diode laser. The laser structure was grown by close space low pressure MOCVD. The typical L-I characteristics of the laser with a 4... View More

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