IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold current 1.55 /spl mu/m lasers using novel selective oxidation of short period superlattice

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Koley, B. ; Saini, S.S. ; King, O. ; Grover, R. ; Johnson, F. ; Dagenais, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811832
Regular:

InGaAsP-InP based injection laser diodes operating at 1.55 /spl mu/m are very attractive for optical communication systems. The most common Al containing material used in InP based system is... View More

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