IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multiple triple-quantum-well active region for above-GaAs-bandgap reflection modulator

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Tobin, M.S. ; Bruno, J.D. ; Pham, J.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811821
Regular:

We have investigated a modulator structure based on GaAs/AlGaAs strongly coupled triple-quantum-wells (TQWs). Photocurrent measurements show sharper excitonic features with the TQW... View More

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