IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Mizumoto, T. ; Yokoi, H. ; Shimizu, M. ; Waniishi, T. ; Futakuchi, N. ; Kaida, N. ; Nakano, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811819
Regular:

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully... View More

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