IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold and high temperature characteristic of 1.3 /spl mu/m InAsP/AlGaInAs MQW ACIS lasers

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Iwai, N. ; Shimizu, H. ; Yamanaka, N. ; Kumada, K. ; Mukaihara, T. ; Kasukawa, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811798
Regular:

A low threshold current (11.2 mA@25/spl deg/C) with high characteristic temperature (T/sub 0/=100 K) has been obtained in 1.3 /spl mu/m InAsP/AlGaInAs MQW lasers by using ACIS (Al-oxide confined... View More

Advertisement