IEEE - Institute of Electrical and Electronics Engineers, Inc. - Near room temperature CW lasing operation of a narrow-stripe oxide-confined GaInNAs/GaAs multi-quantum well laser grown by MOCVD

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Yang, K. ; Hains, C.P. ; Li, N.Y. ; Cheng, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811797
Regular:

The pulsed and cw lasing operation of a 3QW Ga/sub 0.7/In/sub 0.3/N/sub 0.003/As/sub 9.997//GaAs edge-emitting laser (/spl lambda/=1.17 /spl mu/m) have been achieved near room temperature for the... View More

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