IEEE - Institute of Electrical and Electronics Engineers, Inc. - Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Coldren, C.W. ; Spruytte, S.G. ; Harris, J.S. ; Larson, M.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811796
Regular:

Employing InGaNAs materials, low wavelength active regions with emission at 1.3 /spl mu/m have been developed on GaAs substrates. Broad area, single quantum well, in-plane lasers with thresholds... View More

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