IEEE - Institute of Electrical and Electronics Engineers, Inc. - Compressively-strained InGaAsP-active (/spl lambda/=0.78-0.85 /spl mu/m) regions for VCSELs

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Tansu, N. ; Zhou, D. ; Rusli, S. ; Mawst, L.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.811766
Regular:

Compressively-strained (CS) InGaAsP (/spl lambda/=0.78-0.85 /spl mu/m) QW-active regions are evaluated from broad-area edge-emitting diode lasers. High T/sub 0/, T/sub 1/ values make them... View More

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