IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nanometer-scale imaging of crystal deformation in LSI devices

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Ide, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 433 - 436
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808829
Regular:

This paper proposes a new method for imaging strain distribution with LSI device resolution. The new technique named Fourier transform mapping (FTM) is demonstrated for a Si/Ge system that is a... View More

Advertisement