IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Elst, W. ; Van Zomeren, A. ; Berenbaum, D. ; Roede, H. ; Schmitz, J. ; Ellwanger, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 427 - 428
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808827
Regular:

A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed.... View More

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