IEEE - Institute of Electrical and Electronics Engineers, Inc. - "RF-on" polysilicon etch defectivity monitor for manufacturing and process development

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Rao, S.S.P. ; Lavangkul, S. ; Laaksonen, T. ; Ali, A. ; Friedmann, J.B. ; Nam Luu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 399 - 402
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808820
Regular:

Decreasing gate length and increasing chip size are resulting in higher kill ratios from blocked edge defects at polysilicon gate etch. As a result etcher defectivity needs to be closely monitored... View More

Advertisement