IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of carbon contamination enhanced by micro-roughness on gate oxide integrity

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Tsugane, K. ; Yamagisawa, Y. ; Sakai, S. ; Jimbo, T. ; Tomioka, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 161 - 164
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808762
Regular:

We evaluated the effect on gate oxide integrity of increased carbon contamination due to the microroughness of the Si surface. Carbon contaminants introduced into the sacrificial oxide film during... View More

Advertisement