IEEE - Institute of Electrical and Electronics Engineers, Inc. - The cleaning at a back surface and edge of a wafer for introducing Cu metalization process

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Itoh, M. ; Ishii, Y. ; Jinbo, T. ; Akimori, H. ; Futase, T. ; Saeki, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 149 - 152
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808759
Regular:

Cu metalization has been introduced in high-speed CMOS LSIs in order to achieve low electrical resistivity. This means Cu contamination can be spread all over semiconductor equipment by the... View More

Advertisement