IEEE - Institute of Electrical and Electronics Engineers, Inc. - Yield impact of cross-field and cross-wafer CD spatial uniformity: collapse of the deep-UV and 193 nm lithographic focus window

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Monahan, K. ; Lord, P. ; Ng, W. ; Altendorfer, H. ; Kren, G. ; Ashkenaz, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 115 - 118
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808751
Regular:

The 0.13 /spl mu/m semiconductor manufacturing generation, shipping as early as 2001, will have transistor gate structures as small as 100 nm, creating a demand for sub-10 nm gate linewidth... View More

Advertisement