IEEE - Institute of Electrical and Electronics Engineers, Inc. - Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Author(s): Nikawa, K. ; Inoue, S. ; Morimoto, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 11 October 1999
Page(s): 103 - 106
ISBN (Paper): 0-7803-5403-6
ISSN (Paper): 1523-553X
DOI: 10.1109/ISSM.1999.808748
Regular:

The IR-OBIRCH method has been applied to analyze real failures of DRAMs, ASICs, power MOSFETs, and microcomputers, which failed during mass production, development, user test, and ESD simulation.... View More

Advertisement