IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Groves, R. ; Malinowski, J. ; Volant, R. ; Jadus, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1999
Page(s): 149 - 152
ISBN (Paper): 0-7803-5712-4
ISSN (Paper): 1088-5714-0
DOI: 10.1109/BIPOL.1999.803547
Regular:

Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been... View More

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