IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Yamada, T. ; Nii, H. ; Inoh, K. ; Shino, T. ; Kawanaka, S. ; Minami, Y. ; Fuse, T. ; Yoshimi, Y. ; Katsumata, Y. ; Watanabe, S. ; Matsunaga, J. ; Ishiuchi, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1999
Page(s): 129 - 132
ISBN (Paper): 0-7803-5712-4
ISSN (Paper): 1088-5714-0
DOI: 10.1109/BIPOL.1999.803542
Regular:

A novel device structure to realize high-performance SOI lateral BJTs is presented. A metal-backed single-silicon external base electrode and a simple SOI structure achieve low base resistance and... View More

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