IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carbon doped SiGe heterojunction bipolar transistors for high frequency applications

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Osten, H.J. ; Knoll, D. ; Heinemann, B. ; Rucker, H. ; Tillack, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1999
Page(s): 109 - 116
ISBN (Paper): 0-7803-5712-4
ISSN (Paper): 1088-5714-0
DOI: 10.1109/BIPOL.1999.803538
Regular:

The incorporation of low concentrations of carbon (<10/sup 20/ cm/sup -3/) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused... View More

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