IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact ionization and neutral base recombination in SiGe HBTs

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Peter, M.S. ; Slotboom, J.W. ; Terpstra, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1999
Page(s): 58 - 61
ISBN (Paper): 0-7803-5712-4
ISSN (Paper): 1088-5714-0
DOI: 10.1109/BIPOL.1999.803525
Regular:

Both neutral base recombination and impact ionization tend to reduce the base current with increasing V/sub CB/. Contrary to other publications, no experimental evidence for neutral base... View More

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