IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Rickelt, M. ; Rein, H.-M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1999
Page(s): 54 - 57
ISBN (Paper): 0-7803-5712-4
ISSN (Paper): 1088-5714-0
DOI: 10.1109/BIPOL.1999.803524
Regular:

Analytical relations for the onset of impact-ionization induced instabilities in bipolar transistors are derived and verified by both 3D simulations and measurements. They allow the designer to... View More

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