IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT
GaAs IC Symposium. 21st Annual. Technical Digest 1999
Author(s): | C.S. Whelan ; W.E. Hoke ; R.A. McTaggart ; P.S. Lyman ; P.F. Marsh ; S.J. Lichwala ; T.E. Kazior |
Sponsor(s): | IEEE Electron Devices Soc. |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 January 1999 |
Conference Location: | Monterey, CA, USA, USA |
Conference Date: | 17 October 1999 |
Page Count: | 4 |
Page(s): | 225 - 228 |
ISBN (Paper): | 0-7803-5585-7 |
ISSN (Paper): | 1064-7775 |
DOI: | 10.1109/GAAS.1999.803764 |
Regular:
Low on-state breakdown voltage has limited the metamorphic HEMT's power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high... View More