IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT

GaAs IC Symposium. 21st Annual. Technical Digest 1999

Author(s): C.S. Whelan ; W.E. Hoke ; R.A. McTaggart ; P.S. Lyman ; P.F. Marsh ; S.J. Lichwala ; T.E. Kazior
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 17 October 1999
Page Count: 4
Page(s): 225 - 228
ISBN (Paper): 0-7803-5585-7
ISSN (Paper): 1064-7775
DOI: 10.1109/GAAS.1999.803764
Regular:

Low on-state breakdown voltage has limited the metamorphic HEMT's power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high... View More

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