IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suppression of electrochemical etching effects in GaAs PHEMTs

GaAs IC Symposium. 21st Annual. Technical Digest 1999

Author(s): Y. Zhao ; Y. Tkachenko ; D. Bartle
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 17 October 1999
Page Count: 4
Page(s): 163 - 166
ISBN (Paper): 0-7803-5585-7
ISSN (Paper): 1064-7775
DOI: 10.1109/GAAS.1999.803750
Regular:

The electrochemical etching effect is investigated in the recess etching of GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs). It is demonstrated that the electrochemical etching due... View More

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