IEEE - Institute of Electrical and Electronics Engineers, Inc. - Status and roadmap of GaAs technology in Georgia, former Soviet Union

GaAs IC Symposium. 21st Annual. Technical Digest 1999

Author(s): N.P. Khuchua ; A.B. Gerasimov ; R.I. Chikovani ; Z.D. Chakhnakia ; L.V. Khvedelidze ; R.G. Melkadze ; A.P. Bibilashvili ; T.D. Mkheidze ; G.I. Goderdzishvili
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 17 October 1999
Page Count: 4
Page(s): 33 - 36
ISBN (Paper): 0-7803-5585-7
ISSN (Paper): 1064-7775
DOI: 10.1109/GAAS.1999.803721
Regular:

This paper presents highlights and major achievements in research and development of GaAs technology in Georgia in three main directions: MESFETs, HEMTs and digital ICs; low-temperature stimulated... View More

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