IEEE - Institute of Electrical and Electronics Engineers, Inc. - A high gain, low power MMIC LNA for Ka-band using InP HEMTs

1999 IEEE Radio Frequency Integrated Circuits Symposium

Author(s): Pobanz, C. ; Matloubian, M. ; Nguyen, L. ; Case, M. ; Ming Hu ; Lui, M. ; Hooper, C. ; Janke, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 14 June 1999
Page(s): 149 - 152
ISBN (Paper): 0-7803-5604-7
ISSN (Paper): 1097-2633
DOI: 10.1109/RFIC.1999.805258
Regular:

Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 /spl mu/m InP HEMT technology. A five stage single-ended LNA achieved 40... View More

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