IEEE - Institute of Electrical and Electronics Engineers, Inc. - High temperature, optically pumped, 1.55 /spl mu/m VCSEL operating at 6 Gb/s

1999 57th Annual Device Research Conference Digest

Author(s): A. Keating ; A. Black ; A. Karim ; Yi-Jen Chiu ; P. Abraham ; C. Harder ; E. Hu ; J. Bowers
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 196 - 197
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806370
Regular:

In this paper, we use a 980 nm laser to optically pump 1.55 /spl mu/m vertical cavity surface emitting lasers (VCSELs) and demonstrate record output power of 2 mW at 25/spl deg/C and a record... View More

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