IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold current, high efficiency InGaAsPN based long-wavelength quantum well lasers

1999 57th Annual Device Research Conference Digest

Author(s): M.R. Gokhale ; Jian Wei ; P. Studenkov ; Hongsheng Wang ; S.R. Forrest
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 194 - 195
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806369
Regular:

Long wavelength (/spl lambda//spl sim/1.3 /spl mu/m) lasers grown on GaAs using narrow bandgap InGaAsN alloys are the subject of intense material and device research. A high operating temperature... View More

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