IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold current, high efficiency InGaAsPN based long-wavelength quantum well lasers
1999 57th Annual Device Research Conference Digest
| Author(s): | M.R. Gokhale ; Jian Wei ; P. Studenkov ; Hongsheng Wang ; S.R. Forrest |
| Sponsor(s): | IEEE Electron Devices Soc |
| Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
| Publication Date: | 1 January 1999 |
| Conference Location: | Santa Barbara, CA, USA, USA |
| Conference Date: | 23 June 1999 |
| Page Count: | 2 |
| Page(s): | 194 - 195 |
| ISBN (Paper): | 0-7803-5170-3 |
| DOI: | 10.1109/DRC.1999.806369 |
Regular:
Long wavelength (/spl lambda//spl sim/1.3 /spl mu/m) lasers grown on GaAs using narrow bandgap InGaAsN alloys are the subject of intense material and device research. A high operating temperature... View More
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