IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multi-quantum well GaInNAs/GaAs lasers with low threshold current density grown by MOCVD

1999 57th Annual Device Research Conference Digest

Author(s): J. Cheng ; N.Y. Li ; C.P. Hains ; K. Yang
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 192 - 193
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806368
Regular:

This paper reports a significant improvement in the performance of MOCVD-grown Ga(1-x)In/sub x/N/sub y/As/sub 1-y/GaAs lasers. Using a new MOCVD regrowth technique, multi-quantum well... View More

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