IEEE - Institute of Electrical and Electronics Engineers, Inc. - Observation of valence band electron emission from n-type silicon field emitter arrays

1999 57th Annual Device Research Conference Digest

Author(s): Meng Ding ; Han Kim ; A.I. Akinwande
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 170 - 171
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806360
Regular:

We investigate the electron emission behavior of n-type Si field emitters in the presence of high applied voltages. Electron emission from the valence band of an n-type Si field emitter array is... View More

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