IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

1999 57th Annual Device Research Conference Digest

Author(s): D. Xu ; T. Suemitsu ; Y. Umeda ; Y. Yamana ; Y. Ishii ; T. Ishii ; T. Tamamura
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 150 - 151
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806352
Regular:

Summary form only given. When the gate length L/sub g/ of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1 /spl mu/m range in pursuit of higher speed, it is most... View More

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