IEEE - Institute of Electrical and Electronics Engineers, Inc. - Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

1999 57th Annual Device Research Conference Digest

Author(s): K. Uchida ; J. Koga ; R. Ohba ; S. Takagi ; A. Toriumi
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 138 - 139
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806349
Regular:

We have demonstrated the hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage. It also shows both Coulomb staircase and oscillations at 20 K.... View More

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