IEEE - Institute of Electrical and Electronics Engineers, Inc. - Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

1999 57th Annual Device Research Conference Digest

Author(s): Y. Shi ; X.L. Yuan ; S.L. Gu ; R. Zhang ; Y.D. Zheng ; K. Saito ; H. Ishikuro ; T. Hiramoto
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 136 - 137
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806348
Regular:

MOSFET memories based on Si nanocrystals have been considered as most promising application of silicon nano-devices in future VLSI. In the present paper, the charge storage characteristics of the... View More

Advertisement