IEEE - Institute of Electrical and Electronics Engineers, Inc. - 4H-SiC continuous wave SITs

1999 57th Annual Device Research Conference Digest

Author(s): R.R. Siergiej ; R.J. Bojko ; R.C. Clarke ; W.R. Curtice
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 98 - 99
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806339
Regular:

4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR... View More

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