IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertical cavity blue InGaN/GaN MQW light emitting devices using substrate separation and substrate transfer techniques

1999 57th Annual Device Research Conference Digest

Author(s): Y.-K. Song ; M. Diagne ; H. Zhou ; A.V. Nurmikko ; C. Carter-Coman ; R.S. Kern ; F.A. Kish ; M.R. Krames
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 4
Page(s): 94 - 95
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806338
Regular:

Reports a new method for fabricating III-nitride vertical cavity light emitting devices using laser induced substrate separation (LISS) and electrolytic substrate transfer techniques. As a... View More

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