IEEE - Institute of Electrical and Electronics Engineers, Inc. - 4500 V planar implanted anode p-i-n junction rectifiers in 4H-SiC

1999 57th Annual Device Research Conference Digest

Author(s): Z. Li ; N. Ramungul ; T.P. Chow ; M. Ghezzo ; J. Kretchmer ; A. Elasser
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 88 - 89
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806335
Regular:

SiC has been actively explored for high-temperature, high-voltage power electronics applications because of its wide bandgap, large avalanche electric field and high thermal conductivity.... View More

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