IEEE - Institute of Electrical and Electronics Engineers, Inc. - Direct observation of hot electrons in Si-MOSFETs

1999 57th Annual Device Research Conference Digest

Author(s): H. Kawaura ; T. Iizuka ; T. Baba
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 84 - 85
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806333
Regular:

We have directly observed the energy distributions of hot electrons in Si-MOSFETs for the first time. This was accomplished by using a lateral hot-electron transistor (LHET) with two potential... View More

Advertisement