IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

1999 57th Annual Device Research Conference Digest

Author(s): S.J. Kim ; T. Sugaya ; M. Ogura ; Y. Sugiyama ; K. Tomizawa
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 66 - 67
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806326
Regular:

In this paper, we firstly report the negative differential resistance (NDR) characteristics in ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWIR-FET) with the /spl delta/-doped... View More

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