IEEE - Institute of Electrical and Electronics Engineers, Inc. - High temperature, high current, p-channel UMOS 4H-SiC IGBT

1999 57th Annual Device Research Conference Digest

Author(s): R. Singh ; Sei-Hyung Ryu ; J.W. Palmour
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 23 June 1999
Page Count: 2
Page(s): 46 - 47
ISBN (Paper): 0-7803-5170-3
DOI: 10.1109/DRC.1999.806318
Regular:

Commercial silicon Insulated Gate Bipolar Transistors (IGBTs) offer an excellent balance in terms of on-state voltage drop, speed, I-V safe operating area and MOS gate control. A p-channel UMOS... View More

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