IEEE - Institute of Electrical and Electronics Engineers, Inc. - Process-induced damage in a dual-oxide (3.5/6.8 nm) 0.18-/spl mu/m copper CMOS technology

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Hook, T.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 181 - 183
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798843
Regular:

Charging behaviour for three antenna types (polysilicon, contact array, and via array) is investigated for two oxide thicknesses in a copper back-end-of-line (BEOL) technology. We find that both... View More

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