IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Chen, C.-C. ; Lin, H.-C. ; Chang, C.-Y. ; Liang, M.-S. ; Chien, C.-H. ; Hsien, S.-K. ; Huang, T.-Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 141 - 144
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798834
Regular:

Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e. pure oxides and N/sub 2/O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist... View More

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