IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of ion implanter electron flood guns using charge pumping and threshold voltage measurements

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Sawyer, W.D. ; Mason, P.W. ; Santiesteban, R.S. ; Persson, E.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 124 - 127
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798829
Regular:

In this paper, three successive generations of ion implant electron flood devices are compared with regard to their wafer charging characteristics. Gate oxide damage of CMOS antenna transistors is... View More

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